Title :
Field and temperature dependence of TDDB of ultrathin gate oxide
Author :
Yassine, Abdullah ; Nariman, H.E. ; Olasupo, Kola
Author_Institution :
Fab Quality & Reliability Eng. Dept., Adv. Micro Devices Inc., Austin, TX, USA
Abstract :
The results of an investigation of time-dependent breakdown (TDDB) of intrinsic ultrathin gate oxide are presented for a wide range of oxide fields 4.6\n\n\t\t
Keywords :
MOS capacitors; dielectric thin films; oxidation; semiconductor device breakdown; semiconductor device reliability; 1/E model; 200 to 342 C; E model; MOS capacitors; Si-SiO/sub 2/; TDDB; activation energy; elevated temperature; field acceleration parameter; field dependence; oxide field range; oxide reliability; temperature dependence; ultrathin gate oxide; Acceleration; Accelerometers; Electric breakdown; Integrated circuit modeling; Life estimation; Packaging; Stress; Temperature dependence; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
