Submicron transferred-substrate heterojunction bipolar transistors

Author

Lee, Q. ; Martin, S.C. ; Mensa, D. ; Smith, R.P. ; Guthrie, J. ; Rodwell, M.J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

20

Issue

8

fYear

1999

Firstpage

396

Lastpage

398

Abstract

We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBT´s). Devices with 0.4-μm emitter and 0.4-μm collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cutoff frequency f_max is 820 GHz. The high f_max, results from the scaling of HBT´s junction widths, from elimination of collector series resistance through the use of a Schottky collector contact, and from partial screening of the collector-base capacitance by the collector space charge.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; 0.4 micron; 110 GHz; 17.5 dB; 820 GHz; AlInAs-GaInAs; Schottky collector contact; collector series resistance; collector space charge; collector-base capacitance screening; heterojunction bipolar transistor; junction width scaling; power gain cutoff frequency; submicron device; substrate transfer; unilateral gain; Analog-digital conversion; Capacitance; Cutoff frequency; Epitaxial layers; Etching; Frequency conversion; Gain; Heterojunction bipolar transistors; Lithography; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.778155

Filename

778155