DocumentCode
153368
Title
Room temperature THz photoluminescence from IV-group semiconductors under interband excitation
Author
Andrianov, A.V. ; Zakhar´in, A.O. ; Bobylev, A.V. ; Egorov, Sergei V.
Author_Institution
Ioffe Physico-Tech. Inst., St. Petersburg, Russia
fYear
2014
fDate
14-19 Sept. 2014
Firstpage
1
Lastpage
2
Abstract
We report on the observation and study of terahertz (THz) photoluminescence (PL) from IV-group semiconductors (silicon and germanium) under continuous wave interband optical excitation at room temperature. Properties of the observed THz PL allow it to be attributed to a black-body like emission due to heating effects in the region of absorption of pump radiation.
Keywords
III-V semiconductors; optical pumping; photoluminescence; terahertz wave imaging; IV-group semiconductors; black-body like emission; continuous wave interband optical excitation; heating effects; pump radiation absorption; room temperature THz PL; temperature 293 K to 298 K; terahertz photoluminescence; Impurities; Photoluminescence; Semiconductor lasers; Silicon; Temperature; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location
Tucson, AZ
Type
conf
DOI
10.1109/IRMMW-THz.2014.6956400
Filename
6956400
Link To Document