Title :
Effect of substrate bias on the performance and reliability of the split-gate source-side injected flash memory
Author :
Huang, Kuo-Ching ; Fang, Yean-Kuen ; Yaung, Dun-Nian ; Chen, Chii-Wen ; Sung, Hung-Cheng ; Kuo, Di-Son ; Wang, Chung S. ; Liang, Mong-Song
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The effects of the substrate bias on the characteristics of split-gate EEPROM/Flash memory cells have been investigated. It is experimentally demonstrated that applying negative substrate bias (NSB) can improve the programming and erasing speed significantly. The improvements can be attributed that NSB effectively increase the needed electrical fields for fast programming and erasing, respectively. Furthermore, the cycling endurance is improved considerably if NSB is applied for programming and erasing operation both.
Keywords :
flash memories; integrated circuit reliability; EEPROM cell; cycling endurance; electrical field; erasing speed; negative substrate bias; programming speed; reliability; source-side injection; split-gate flash memory; EPROM; Electrons; Etching; Flash memory; Flash memory cells; Nonvolatile memory; Silicon; Split gate flash memory cells; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
