Title :
1.2 kV trench insulated gate bipolar transistors (IGBT´s) with ultralow on-resistance
Author :
Udrea, F. ; Chan, S.S.M. ; Thomson, J. ; Trajkovic, T. ; Waind, P.R. ; Amaratunga, G.A.J. ; Crees, D.E.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
In this letter, we report the full development of 1.2 kV Trench IGBT´s with ultralow on-resistance, latch-up free operation and highly superior overall performance when compared to state of the art IGBT´s. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for nonirradiated devices and 2.1 V for irradiated devices. The maximum controllable current density was in excess of 1000 A/cm/sup 2/.
Keywords :
insulated gate bipolar transistors; 1.2 kV; Trench IGBT; current density; device irradiation; forward voltage drop; latch-up; on-resistance; trench insulated gate bipolar transistor; Analytical models; Conductivity; Current density; Electric breakdown; Geometry; Insulated gate bipolar transistors; MOSFET circuits; Medical simulation; Performance analysis; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
