Title :
A 170–280 GHz InP HEMT low noise amplifier
Author :
Zamora, Alejandro ; Leong, Kevin M. K. H. ; Reck, Theodore ; Chattopadhyay, Goutam ; Deal, William
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
We present on-wafer and packaged measurements of a broad-band 170-280 GHz low noise amplifier based on high frequency InP HEMT technology. Discussed is the design and packaging of the CPW-based MMIC. Chip-to-waveguide transitions are monolithically integrated onto the MMIC to minimize losses at the transition within the split-block-waveguide housing. Packaged gain and noise figure are reported to be >10 dB, and <; 7 dB, respectively, across the entire band of operation. Noise figure is <; 6 dB on the 190-240 GHz band, with minimum noise figure reported to be 5.3 dB at 200 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MIMIC; MMIC amplifiers; coplanar waveguides; indium compounds; integrated circuit design; integrated circuit packaging; low noise amplifiers; millimetre wave amplifiers; wideband amplifiers; CPW-based MMIC; InP; broadband HEMT low noise amplifier; chip-to-waveguide transitions; frequency 170 GHz to 280 GHz; high frequency HEMT technology; noise figure; noise figure 5.3 dB; on-wafer measurements; packaged gain; packaged measurements; split-block-waveguide housing; Gain; HEMTs; Loss measurement; Noise figure; Temperature measurement; Transmission line measurements;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956402
