A 475-V high-voltage 6H-SiC lateral MOSFET

Author

Saks, N.S. ; Mani, S.S. ; Agarwal, A.K. ; Ancona, M.G.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

20

Issue

8

fYear

1999

Firstpage

431

Lastpage

433

Abstract

High-voltage lateral MOSFET´s on 6H- and 4H-SiC have been fabricated with 400-475 V breakdown voltage using the RESURF principle. An MOS electron inversion layer mobility of about 50 cm/sup 2//V-s is obtained on 6H-SiC wafers. This mobility is high enough such that the specific on-resistance of the 6H-SiC MOSFET´s (/spl sim/0.29-0.77 /spl Omega/-cm/sup 2/) is limited by the resistance of the drift layer, as desired. However, the implanted drift layer resistance is about ten times higher than expected for the implant dose used. Design and process changes are described to decrease the on-resistance and increase the breakdown voltage. For 4H-SiC, extremely low mobility was obtained, which prevents satisfactory device operation.

Keywords

electron mobility; inversion layers; power MOSFET; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 475 V; 6H-SiC high-voltage lateral MOSFET; MOS electron inversion layer mobility; RESURF design; SiC; breakdown voltage; drift layer resistance; ion implantation; specific on-resistance; Annealing; Electric breakdown; Epitaxial layers; Fabrication; Implants; MOS devices; MOSFET circuits; Silicon carbide; Silicon devices; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.778167

Filename

778167