Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations

Author

Huang, Yong-Zhen ; Guo, Wei-Hua ; Yu, Li-Juan ; Lei, Hong-Bin

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

37

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

1259

Lastpage

1264

Abstract

Semiconductor microlasers with an equilateral triangle resonator (ETR) are analyzed by rate equations with the mode lifetimes calculated by the finite-difference time-domain technique and the Pade approximation. A gain spectrum based on the relation of the gain spectrum and the spontaneous emission spectrum is proposed for considering the mode selection in a wide wavelength span. For an ETR microlaser with a side length of about 5 μm, we find that single fundamental mode operation at about 1.55 μm can be obtained as the side length increases from 4.75 to 5.05 μm. The corresponding wavelength tuning range is 93 nm, and the threshold current is about 0.1 to 0.4 mA

Keywords

III-V semiconductors; finite difference time-domain analysis; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser tuning; quantum well lasers; spontaneous emission; 0.1 to 0.4 mA; 1.55 mum; 4.75 to 5.05 mum; ETR microlaser; InGaAs quantum wells; InGaAs-InGaAsP; InGaAsP laser wafer; Pade approximation; equilateral triangle resonator; finite-difference time-domain technique; gain spectrum; mode lifetimes; mode selection; rate equation analysis; semiconductor microlasers; side length; single fundamental mode operation; spontaneous emission spectrum; threshold current; wavelength tuning range; Equations; Finite difference methods; Indium phosphide; Laser modes; Laser tuning; Optical refraction; Propagation constant; Semiconductor lasers; Spontaneous emission; Time domain analysis;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.952537

Filename

952537