• DocumentCode
    1534503
  • Title

    Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature

  • Author

    Onishi, Teruo ; Imafuji, Osamu ; Nagamatsu, Ken ; Kawaguchi, Masashi ; Yamanaka, Keiji ; Takigawa, S.

  • Author_Institution
    Panasonic Corporation, Kyoto, Japan
  • Volume
    48
  • Issue
    9
  • fYear
    2012
  • Firstpage
    1107
  • Lastpage
    1112
  • Abstract
    We report on continuous wave lasing characteristics of GaN vertical cavity surface emitting lasers (VCSELs). The VCSEL operates at room temperature under current injection by using highly reflective distributed Bragg reflectors (DBRs) made up of transparent {\\rm ZrO}_{2} and {\\rm SiO}_{2} film stacks. Together with high reflectivity and the wide stop band of the DBR, the long cavity of 6 \\mu{\\rm m} allows multimode lasing oscillation with narrow mode spacing of 2.9 nm. In addition, a short cavity structure of 2 \\mu{\\rm m} is fabricated and shows quasi-single mode operation. The spacing of the lasing modes shows a clear dependence of the actual cavity lengths with fairly good agreement to theory taking account of the refractive index dispersion.
  • Keywords
    Cavity resonators; Distributed Bragg reflectors; Gallium nitride; Optical device fabrication; Vertical cavity surface emitting lasers; Distributed Bragg reflectors (DBRs); GaN; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2012.2203586
  • Filename
    6213472