DocumentCode
1534503
Title
Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature
Author
Onishi, Teruo ; Imafuji, Osamu ; Nagamatsu, Ken ; Kawaguchi, Masashi ; Yamanaka, Keiji ; Takigawa, S.
Author_Institution
Panasonic Corporation, Kyoto, Japan
Volume
48
Issue
9
fYear
2012
Firstpage
1107
Lastpage
1112
Abstract
We report on continuous wave lasing characteristics of GaN vertical cavity surface emitting lasers (VCSELs). The VCSEL operates at room temperature under current injection by using highly reflective distributed Bragg reflectors (DBRs) made up of transparent
and
film stacks. Together with high reflectivity and the wide stop band of the DBR, the long cavity of 6
allows multimode lasing oscillation with narrow mode spacing of 2.9 nm. In addition, a short cavity structure of 2
is fabricated and shows quasi-single mode operation. The spacing of the lasing modes shows a clear dependence of the actual cavity lengths with fairly good agreement to theory taking account of the refractive index dispersion.
Keywords
Cavity resonators; Distributed Bragg reflectors; Gallium nitride; Optical device fabrication; Vertical cavity surface emitting lasers; Distributed Bragg reflectors (DBRs); GaN; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2012.2203586
Filename
6213472
Link To Document