A Simple Pixel Structure Using Polycrystalline-Silicon Thin-Film Transistors for High-Resolution Active-Matrix Organic Light-Emitting Diode Displays

Author

In, Hai-Jung ; Kwon, Oh-Kyong

Author_Institution

Dept. of Electron. Eng., Hanyang Univ., Seoul, South Korea

Volume

33

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1018

Lastpage

1020

Abstract

A simple pixel structure comprising two transistors and one capacitor and a novel driving method are proposed for small-sized and high-resolution active-matrix organic light-emitting diode displays on polycrystalline-silicon thin-film transistor (TFT) backplane. The proposed pixel increases the yield due to small number of TFTs and improves image quality by compensating threshold voltage variations of driving TFTs. The proposed pixel is designed as test pixels with 353 pixels per inch, and the measured emission current error range of -74.2% -60.6% is improved to the range of -2.5% -2.1% when the proposed pixel is used.

Keywords

LED displays; elemental semiconductors; image resolution; silicon; thin film transistors; AMOLED displays; Si; high-resolution active-matrix organic light-emitting diode displays; image quality; polycrystalline-silicon thin-film transistor backplane; simple pixel structure; test pixels; threshold voltage variations compensation; Active matrix organic light emitting diodes; Indexes; Thin film transistors; Threshold voltage; Voltage measurement; Displays; high-resolution imaging; organic light-emitting diodes (OLEDs); thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2196752

Filename

6213488