DocumentCode :
1534689
Title :
Variable Inductors in CMOS for Millimeter-Wave Applications
Author :
Yun, Yang-Hun ; Kao, Te-Yu J. ; Kenneth, K.O.
Author_Institution :
Dept. of Electr. Eng., SiMICS Res. Group, Univ. of Texas at Dallas, Richardson, TX, USA
Volume :
33
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
1081
Lastpage :
1083
Abstract :
Transformer-based variable inductors usable up to ~77 GHz are demonstrated. Measured inductance of two variable inductors can be tuned from 56.5 to 67 pH and from 55.7 to 61.9 pH at 77 GHz. The bandwidth Q is greater than ten at 77 GHz. This is higher than that of typical Q of ~4 for MOS varactors which is an alternate tunable element. This indicates that variable inductors with useful tuning range and sufficiently high Q can be realized in CMOS for use in millimeter-wave circuits.
Keywords :
CMOS integrated circuits; inductance; inductors; millimetre wave devices; transformers; tuning; varactors; CMOS; MOS varactors; frequency 77 GHz; inductance measurement; millimeter-wave application; millimeter-wave circuits; transformer-based variable inductors; tunable element; tuning range; CMOS integrated circuits; Frequency measurement; Inductance; Inductors; Resistance; Resonant frequency; Varactors; CMOS; millimeter wave; variable inductor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2196966
Filename :
6213497
Link To Document :
بازگشت