An enhanced on-wafer millimeter-wave noise parameter measurement system

Author

Béland, Paul ; Roy, Langis ; Labonté, Sylvain ; Stubbs, Malcolm

Author_Institution

Dept. of Electr. Eng., Ottawa Univ., Ont., Canada

Volume

48

Issue

4

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

825

Lastpage

829

Abstract

A novel on-wafer resistive noise source, useful for noise characterization of microwave devices with the cold noise power measurement technique, is described. The noise source enhances measurement accuracy by providing a calibrated noise temperature directly at the device reference plane. A procedure for determining the excess noise ratio of the noise source is presented and validated up to 40 GHz. The noise source is employed in an on-wafer measurement system, allowing the noise parameters of two-port devices to be extracted. Following a description of the apparatus and measurement procedure, an example of a high-electron-mobility transistor noise parameter measurement at millimeter-wave frequencies is presented

Keywords

electric noise measurement; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device measurement; thin film resistors; 40 GHz; MM-wave noise parameter measurement system; calibrated noise temperature; cold noise power measurement technique; device reference plane; enhanced measurement accuracy; excess noise ratio; high-electron-mobility transistor; microwave device noise characterization; on-wafer measurement system; on-wafer resistive noise source; thin film resistor; two-port devices; Frequency measurement; Microwave devices; Microwave theory and techniques; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Noise measurement; Power measurement; Signal to noise ratio; Temperature;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.779182

Filename

779182