Title :
Terahertz emission from InGaN/GaN multiple quantum well light-emitting diode heterostructures under two-photon excitation
Author :
Sarkisov, Sergey Yu ; Prudaev, Ilya A. ; Kosobutsky, Alexey V. ; Tolbanov, Oleg P. ; Dunaevsky, Grigory E.
Author_Institution :
Nat. Res. Tomsk State Univ., Tomsk, Russia
Abstract :
Series of experiments on terahertz generation from InGaN/GaN light-emitting diode heterostructures at one- and two-photon excitation by femtosecond laser pulses has been conducted. Considerable terahertz emission at two-photon excitation of the structures has been found.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photons; semiconductor quantum wells; terahertz wave generation; wide band gap semiconductors; InGaN-GaN; femtosecond laser pulses; light-emitting diode heterostructures; quantum well; terahertz emission; terahertz generation; two-photon excitation; Crystals; Gallium nitride; III-V semiconductor materials; Indium; Laser excitation; Light emitting diodes; Quantum well lasers;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956482
