Computation of capacitance matrix for integrated circuit interconnects using on-surface MEI method

Author

Liu, Y.W. ; Lan, K. ; Mei, K.K.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

Volume

9

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

303

Lastpage

304

Abstract

In this letter the capacitance matrix of integrated circuit interconnects has been successfully calculated by using the on-surface MEI (OSMEI) method. The OSMEI method uses the same mesh as the method of moments (MoM), but generates highly sparse matrixes. Thus, computation memory can be greatly reduced. The reason the sparse matrixes can be generated is that the local relationship between the potentials and charge densities on the mesh nodes can be numerically found by the MEI method. This approach is verified by two-dimensional (2-D) and three-dimensional (3-D) examples of the integrated circuit interconnects with errors within 2%-4%

Keywords

capacitance; integrated circuit interconnections; integrated circuit modelling; sparse matrices; OSMEI method; capacitance matrix; integrated circuit interconnect; on-surface measured equation of invariance; sparse matrix; Capacitance; Conductors; Equations; Integrated circuit interconnections; LAN interconnection; Mesh generation; Moment methods; Sparse matrices; Two dimensional displays; Very high speed integrated circuits;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.779909

Filename

779909