Title :
160-190-GHz monolithic low-noise amplifiers
Author :
Kok, Y.L. ; Wang, Huifang ; Huang, T.W. ; Lai, Richard ; Barsky, M. ; Chen, Yu Christine ; Sholley, M. ; Block, T. ; Streit, D.C. ; Allen, B.R. ; Samoska, Lorene ; Gaier, Todd
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
The authors present the results of two 160-190-GHz monolithic low-noise amplifiers (LNAs) fabricated with 0.07-μm pseudomorphic (PM) InAlAs-InGaAs-InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3 dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6 dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with a 0.08-μm gate and a wet etch process, showing a small-signal gain of 6 dB with 6 dB noise figure. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; electric noise measurement; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit design; integrated circuit measurement; integrated circuit noise; millimetre wave amplifiers; millimetre wave measurement; 0.07 micron; 0.08 micron; 142 to 192 GHz; 6 dB; 9 dB; EHF; InAlAs-InGaAs-InP; LNA noise measurement; MM-wave ICs; PHEMT technology; RIE via hole process; low-noise amplifiers; monolithic LNA; pseudomorphic HEMT technology; reactive ion etch; wet etch process; Frequency; Gain measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MMICs; Performance gain; Space technology;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
