Title :
High-speed and high-power GaInAsP/InP junction field-effect transistor with submicron gate
Author :
Furutsu, M. ; Sudo, H. ; Soda, H. ; Ishikawa, Hiroshi ; Imai, H.
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa
fDate :
6/9/1988 12:00:00 AM
Abstract :
Depletion-mode GaInAsP/InP junction field-effect transistors have been fabricated on Fe-doped semi-insulating InP substrates using liquid-phase epitaxial growth techniques. The authors achieved transconductance of 24 mS (160 mS/mm), drain-source saturation current at an on gate bias of 486 mA/mm and current cutoff frequency of 18.8 GHz using a GaInAsP channel layer owing to the gate length reduction
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; junction gate field effect transistors; liquid phase epitaxial growth; optical communication equipment; power transistors; solid-state microwave devices; 18.8 GHz; 24 mS; GaInAsP channel layer; GaInAsP-InP transistor; InP:Fe; JFET; LPE; SHF; SI substrates; current cutoff frequency; depletion mode; drain-source saturation current; gate length reduction; junction field-effect transistor; liquid-phase epitaxial growth; submicron gate; transconductance;
Journal_Title :
Electronics Letters
