• DocumentCode
    1535237
  • Title

    Micromachined based narrow band Fabry-Perot tunable bandpass filter

  • Author

    Karim, M.F. ; Liu, A.Q. ; Ong, L.C. ; Guo, Yong-Xin

  • Author_Institution
    Inst. for Infocomm Res. (I, Singapore, Singapore
  • Volume
    6
  • Issue
    5
  • fYear
    2012
  • Firstpage
    562
  • Lastpage
    568
  • Abstract
    A micromachined based narrow band Fabry-Perot tunable bandpass filter is designed, fabricated and measured. The narrow bandpass characteristic is due to the cavity formed in the bandgap structures by the insertion of a transmission line resonator between the two Bragg reflectors. The parametric analyses of the Fabry-Perot electromagnetic bandgap (EBG) filter are investigated by considering (i) the effect of the EBG cells on the Q factor; (ii) the change in the cavity length and the slot dimension to influence the filter performance characteristics; and (iii) the propagation characteristics of the Fabry-Perot EBG filter. The Fabry-Perot EBG tunable filter is fabricated on a silicon substrate using a surface micromachining process. The measurement result of the fixed Fabry-Perot filter shows a 3-dB bandwidth of around 250-MHz with an insertion loss of 4-dB. Capacitive microelectromechanical system switches are fabricated in the cavity to develop a tunable filter. The switch heights are varied with a bias voltage from 0 to 34-V, and the resonant frequency is tuned. The result shows a tuning range of 7.5- with an insertion loss that varies from 4.1 to 7.35-dB.
  • Keywords
    Fabry-Perot resonators; Q-factor; VHF filters; band-pass filters; micromachining; microswitches; photonic band gap; resonator filters; transmission lines; Bragg reflector; Fabry-Perot EBG tunable filter; Fabry-Perot electromagnetic bandgap filter; Q factor; bandgap structures; capacitive microelectromechanical system switch; loss 4 dB to 7.35 dB; micromachined based narrow band Fabry-Perot tunable bandpass filter; narrow bandpass characteristic; parametric analysis; propagation characteristics; silicon substrate; surface micromachining process; transmission line resonator; voltage 0 V to 34 V;
  • fLanguage
    English
  • Journal_Title
    Microwaves, Antennas & Propagation, IET
  • Publisher
    iet
  • ISSN
    1751-8725
  • Type

    jour

  • DOI
    10.1049/iet-map.2010.0527
  • Filename
    6213699