A 1.2-million transistor, 33-MHz, 20-b dictionary search processor (DISP) ULSI with a 160-kb CAM

Author

Motomura, Masato ; Toyoura, Jun ; Hirata, Kazumi ; Ooka, Hideyuki ; Yamada, Hachiro ; Enomoto, Tadayoshi

Author_Institution

NEC Corp., Kanagawa, Japan

Volume

25

Issue

5

fYear

1990

fDate

10/1/1990 12:00:00 AM

Firstpage

1158

Lastpage

1165

Abstract

A 1.2-million transistor, 33-MHz, 20-b dictionary search processor (DISP) ULSI has been developed using a 0.8-μm triple-layer-Al, CMOS fabrication technology. A 13.02×12.51-mm² chip contains a specially developed 160-kb content addressable memory (CAM) and cellular automation processor (CAP). A single DISP chip can store a maximum of 2048 words, and performs dictionary search in various search modes, including an approximate word search. The character input rate for the dictionary search operation is 33 million characters per second. The DISP typically consumes 800 mW at a supply voltage of 5 V. A high-speed, functional 50000 word dictionary search system can be built with 25 DISP chips arranged in parallel, to play an important role in natural language processing

Keywords

CMOS integrated circuits; content-addressable storage; microprocessor chips; 160 kbit; 20 bit; 33 MHz; 5 V; 800 mW; Al; CAM; CMOS fabrication technology; DISP chip; ULSI; approximate word search; content addressable memory; dictionary search processor; natural language processing; parallel connected chips; triple-layer-Al; Associative memory; Automation; CADCAM; CMOS process; CMOS technology; Computer aided manufacturing; Dictionaries; Fabrication; Ultra large scale integration; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.62138

Filename

62138