Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

Author

Balandin, A. ; Morozov, S.V. ; Cai, S. ; Li, R. ; Wang, K.L. ; Wijeratne, G. ; Viswanathan, C.R.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

47

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1413

Lastpage

1417

Abstract

We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of 1/f noise found in these devices (i.e., the Hooge parameter is on the order of 10^-1) open up the possibility for applications in communication systems. We have examined the scaling of the noise spectral density with the device dimensions in order to optimize their performance. It was also found that the slope γ of the 1/f^γ noise density spectrum is in the 1.0-1.3 range for all devices and decreases with the decreasing (i.e., more negative) gate bias. The results are important for low-noise electronic technologies requiring a low phase-noise level

Keywords

1/f noise; III-V semiconductors; aluminium compounds; flicker noise; gallium compounds; microwave field effect transistors; phase noise; semiconductor device noise; 1/f noise; GaN-AlGaN; Hooge parameter; flicker noise; gate bias; heterostructure field-effect transistors; low-noise electronic technologies; microwave communications; noise density spectrum; noise spectral density; phase-noise level; scaling; 1f noise; Aluminum gallium nitride; FETs; Gallium nitride; HEMTs; MODFETs; Microwave communication; Microwave devices; Microwave technology; Semiconductor device noise;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.780388

Filename

780388