Title :
Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications
Author :
Chen, Pin-Fan ; Hsin, Yue-ming Tony ; Welty, Rebecca J. ; Asbeck, Peter M. ; Pierson, Richard L. ; Zampardi, Peter J. ; Ho, W.J. ; Vincent Ho, M.C. ; Chang, M. Frank
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
fDate :
8/1/1999 12:00:00 AM
Abstract :
Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GaInP/GaAs double-heterojunction bipolar transistors with GaInP collectors can improve over GaAs single-heterojunction bipolar transistors (HBTs) in power-amplifier applications, based on lower offset voltage, increased breakdown electric field, and absence of saturation charge storage. To best exploit these characteristics, amplifier architectures that employ HBTs in switching mode can be used
Keywords :
III-V semiconductors; UHF bipolar transistors; UHF power amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; mobile radio; power bipolar transistors; semiconductor device breakdown; DHBT; GaInP collectors; GaInP-GaAs; amplifier architectures; breakdown electric field; double-heterojunction bipolar transistors; offset voltage; power amplifiers; saturation charge storage; switching mode; wireless communications; Bipolar transistors; Breakdown voltage; Costs; Gallium arsenide; Linearity; Manufacturing; Microwave devices; Power amplifiers; Thermal management; Wireless communication;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
