Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications

Author

Chen, Pin-Fan ; Hsin, Yue-ming Tony ; Welty, Rebecca J. ; Asbeck, Peter M. ; Pierson, Richard L. ; Zampardi, Peter J. ; Ho, W.J. ; Vincent Ho, M.C. ; Chang, M. Frank

Author_Institution

California Univ., San Diego, La Jolla, CA, USA

Volume

47

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1433

Lastpage

1438

Abstract

Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GaInP/GaAs double-heterojunction bipolar transistors with GaInP collectors can improve over GaAs single-heterojunction bipolar transistors (HBTs) in power-amplifier applications, based on lower offset voltage, increased breakdown electric field, and absence of saturation charge storage. To best exploit these characteristics, amplifier architectures that employ HBTs in switching mode can be used

Keywords

III-V semiconductors; UHF bipolar transistors; UHF power amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; mobile radio; power bipolar transistors; semiconductor device breakdown; DHBT; GaInP collectors; GaInP-GaAs; amplifier architectures; breakdown electric field; double-heterojunction bipolar transistors; offset voltage; power amplifiers; saturation charge storage; switching mode; wireless communications; Bipolar transistors; Breakdown voltage; Costs; Gallium arsenide; Linearity; Manufacturing; Microwave devices; Power amplifiers; Thermal management; Wireless communication;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.780391

Filename

780391