A Novel Nanoscale 4H-SiC-on-Insulator MOSFET Using Step Doping Channel

In this paper, we present the unique features exhibited by a novel step doping channel technique in nanoscale silicon carbide metal-oxide-semiconductor field-effect transistors (SDC-MOSFETs) for reaching a suitable threshold voltage upon device scaling and reliability improvement. The device demonstrates large enhancements in performance areas such as output resistance, hot-electron reliability, and threshold voltage upon channel-length or drain-voltage variation. Also, we describe an optimization technique in SDC-MOSFET for improving the threshold-voltage characterization. It was also found that the device performance is very much dependent upon the SDC region parameters. Results show that the most difficult problem of using silicon carbide in VLSI circuits could be solved and that the proposed silicon carbide MOSFETs can work very well in the nanoscale regime.