A Ka-band micromachined low-phase-noise oscillator

Author

Brown, Andrew R. ; Rebeiz, Gabriel M.

Author_Institution

Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA

Volume

47

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1504

Lastpage

1508

Abstract

A low-phase-noise 28.65 GHz oscillator has been demonstrated using a planar resonator. The resonator is micromachined close to the transistor and has an unloaded Q of 460. The oscillator uses a commercially available high electron mobility transistor (HEMT) for the active device, and results in an output power of 0.6 dBm with a 5.7% DC-RF efficiency. The measured phase noise is -92 dBc/Hz at a 100 kHz offset frequency and -122 dBc/Hz at 1 MHz offset frequency. This is compared with a low-Q planar design showing a 10 dB improvement in phase noise. The micromachined resonator is competitive with other hybrid nonplanar technologies, such as dielectric resonators

Keywords

HEMT circuits; Q-factor; dielectric resonator oscillators; hybrid integrated circuits; integrated circuit noise; microstrip circuits; microwave integrated circuits; microwave oscillators; millimetre wave integrated circuits; millimetre wave oscillators; phase noise; 28.65 GHz; 5.7 percent; CPW; DRO; EHF; HEMT active device; Ka-band oscillator; MIC; SHF; high electron mobility transistor; high-Q resonator; low-Q planar design; low-phase-noise oscillator; micromachined oscillator; micromachined resonator; planar resonator; Circuits; Coplanar waveguides; Dielectric losses; Dielectric substrates; Frequency; Microstrip; Microwave oscillators; Optical losses; Optical resonators; Phase noise;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.780401

Filename

780401