Temperature dependence of threshold voltage in thin-film SOI MOSFETs

Author

Groeseneken, Guido ; Colinge, Jean-Pierre ; Maes, Herman E. ; Alderman, J.C. ; Holt, S.

Author_Institution

Interuniv. Microelectron. Center, Leuven, Belgium

Volume

11

Issue

8

fYear

1990

Firstpage

329

Lastpage

331

Abstract

A first-order model for the temperature dependence of threshold voltage in thin-film silicon-on-insulator (SOI) n-MOSFETs is described. The temperature dependence of the threshold voltage of thin-film SOI n-channel MOSFETs is analyzed. Threshold voltage variation with temperature is significantly smaller in thin-film (fully depleted) devices than in thick-film SOI and bulk devices. The threshold voltage is shown to be dependent on the depletion level of the device, i.e. whether it is fully depleted or not. There exists a critical temperature below which the device is fully depleted, and above which the device operates in the thick-film regime.<>

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; SOI n-channel MOSFETs; bulk devices; critical temperature; first-order model; fully depleted devices; n-MOSFETs; temperature dependence; thick-film regime; thin-film silicon-on-insulator; threshold voltage; CMOS technology; Circuits; MOSFETs; Semiconductor films; Silicon on insulator technology; Temperature dependence; Temperature distribution; Thin film devices; Threshold voltage; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.57923

Filename

57923