• DocumentCode
    1535593
  • Title

    Reverse Temperature Dependence of Circuit Performance in High- \\kappa /Metal-Gate Technology

  • Author

    Han, Shu-Jen ; Guo, Dechao ; Wang, Xinlin ; Mocuta, Anda C. ; Henson, William K. ; Rim, Ken

  • Author_Institution
    IBM T J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    30
  • Issue
    12
  • fYear
    2009
  • Firstpage
    1344
  • Lastpage
    1346
  • Abstract
    The temperature dependence of ring-oscillator delay of high-kappa /metal-gate (HKMG) and poly-Si/SiON technologies are analyzed. HKMG gate stacks drive significantly stronger threshold temperature dependence over poly-Si/SiON. This effect, together with the reduced mobility temperature sensitivity, result in higher drive current at elevated temperature for HKMG devices. This is in contrast to poly-Si/SiON technology where the low-driven current performance-limiting corner is typically at high temperature.
  • Keywords
    MOSFET; electron mobility; high-k dielectric thin films; oscillators; silicon; silicon compounds; thermal analysis; CMOS device characteristics; NFET; Si-SiON; drive current; electron mobility; high-kappa-metal-gate technology; reduced mobility temperature sensitivity; reverse temperature dependence; ring-oscillator delay; High-$kappa$ dielectric; metal gate; temperature dependence; work function;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2033082
  • Filename
    5308312
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1535593