Title :
Time-resolved photoluminescence system with subnanosecond resolution at wavelengths up to 1.65 μm
Author :
Marsh, John H. ; Dickson, G. ; Claxton, P.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
fDate :
6/9/1988 12:00:00 AM
Abstract :
A system for measuring carrier lifetimes as short as 100 ps at luminescence wavelengths up to 1.65 μm has been developed. This uses the photoluminescence phase shift technique and is based around a guided-wave lithium niobate modulator with a high (5 GHz) bandwidth. Measurements have been performed on an MBE grown sample consisting of 25 Å thick quantum wells of Ga0.47In0.53As with 100 Å thick barriers of InP, and the lifetime was found to be 3 ns
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; 0 to 5 GHz; 1.65 micron; 100 A; 100 to 3000 ps; 25 A; 5 GHz; Ga0.47In0.53As-InP; MBE; MBE grown sample; MQW structure; guided wave LiNbO3 modulator; measuring carrier lifetimes; photoluminescence phase shift technique; quantum wells; semiconductors; subnanosecond resolution; time resolved photoluminescence;
Journal_Title :
Electronics Letters
