Surface Emission Vertical Cavity Transistor Laser

Author

Wu, Mong-Kai ; Feng, Milton ; Holonyak, Nick

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

Volume

24

Issue

15

fYear

2012

Firstpage

1346

Lastpage

1348

Abstract

We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantum-wells in the base and vertical distributed Bragg reflectors. The transistor collector I-V characteristics show gain (β = ΔI_c/ΔI_B) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (I_B >; I_TH). The surface emission VCTL threshold current is I_TH ~ 3 mA for a cavity of 9×6 μm² lateral dimensions. The laser spectra at IB = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth Δλ ~ 0.7 Å.

Keywords

III-V semiconductors; distributed Bragg reflectors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; surface emitting lasers; I-V characteristics; InGaAs; InGaAs quantum wells; InGaP; InGaP heterojunction bipolar transistor; VCTL operation; base recombination shifting; distributed Bragg reflectors; laser spectra; surface emission vertical cavity laser; transistor collector; transistor laser; Cavity resonators; Distributed Bragg reflectors; Heterojunction bipolar transistors; Radiative recombination; Vertical cavity surface emitting lasers; Transistor laser; vertical cavity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2203356

Filename

6214571