Application of BEM to high-voltage junction termination

Author

Wu, Zilu ; Gao, Yumin ; Luo, Jinsheng ; Hou, Xun ; Chen, Guofu

Author_Institution

State Key Lab. of Transient Opt. Technol., Acad. of Sci., Xi´´an, China

Volume

20

Issue

10

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

1218

Lastpage

1225

Abstract

Ideas for using the boundary element method (BEM) with the concept of critical electric field for simulation of high-voltage junction termination are introduced. Approaches for dealing with interface charges, depleted regions, and metal field plates are presented. Rules used to develop and apply the BEM program are given. Simulation of one silicon-on-insulator diode is performed and the results are compared with those obtained using the finite difference method

Keywords

boundary-elements methods; electric fields; finite difference methods; p-n junctions; power semiconductor diodes; semiconductor device breakdown; silicon-on-insulator; BEM; SOI; Si; boundary element method; critical electric field; depleted regions; finite difference method; high-voltage junction termination; interface charges; metal field plates; Boundary element methods; Convergence; Design optimization; Diodes; Electric potential; Finite difference methods; Finite element methods; P-n junctions; Silicon on insulator technology; Voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.952738

Filename

952738