• DocumentCode
    1535790
  • Title

    Effect of proton implantation on the degradation of GaAs/AlGaAs vertical cavity surface emitting lasers

  • Author

    Jiang, W. ; Gaw, C. ; Kiely, P. ; Lawrence, B. ; Lebby, M. ; Claisse, P.R.

  • Author_Institution
    Photonics Technol. Center, Motorola Inc., Tempe, AZ, USA
  • Volume
    33
  • Issue
    2
  • fYear
    1997
  • fDate
    1/16/1997 12:00:00 AM
  • Firstpage
    137
  • Lastpage
    139
  • Abstract
    The electroluminescence (EL) technique is used to analyse the degradation mode of VCSELs with proton implantation for current confinement. Point defects generated by the implantation in the active layer are believed to affect the VCSEL long term reliability
  • Keywords
    gallium arsenide; GaAs-AlGaAs; VCSEL; current confinement; degradation mode; electroluminescence technique; long term reliability; point defects; proton implantation; surface emitting lasers; vertical cavity SEL;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970088
  • Filename
    579434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1535790