Title :
Effect of proton implantation on the degradation of GaAs/AlGaAs vertical cavity surface emitting lasers
Author :
Jiang, W. ; Gaw, C. ; Kiely, P. ; Lawrence, B. ; Lebby, M. ; Claisse, P.R.
Author_Institution :
Photonics Technol. Center, Motorola Inc., Tempe, AZ, USA
fDate :
1/16/1997 12:00:00 AM
Abstract :
The electroluminescence (EL) technique is used to analyse the degradation mode of VCSELs with proton implantation for current confinement. Point defects generated by the implantation in the active layer are believed to affect the VCSEL long term reliability
Keywords :
gallium arsenide; GaAs-AlGaAs; VCSEL; current confinement; degradation mode; electroluminescence technique; long term reliability; point defects; proton implantation; surface emitting lasers; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970088
