• DocumentCode
    1535862
  • Title

    Measurement of a VPE-transported DFB laser with blue-shifted frequency modulation response from DC to 2 GHz

  • Author

    Goobar, E. ; Gillner, L. ; Schatz, R. ; Broberg, B. ; Tanbun-Ek, T. ; Nilsson, S.

  • Author_Institution
    Dept. of Microwave Eng. & Fibre Opt., R. Inst. of Technol., Stockholm, Sweden
  • Volume
    24
  • Issue
    12
  • fYear
    1988
  • fDate
    6/9/1988 12:00:00 AM
  • Firstpage
    746
  • Lastpage
    747
  • Abstract
    The frequency modulation characteristics of a VPE-transported 1.53 μm wavelength GaInAsP-InP DFB semiconductor diode laser was measured. Below approximately 0.7 mW optical output power per facet, it exhibited a smooth, blue-shifted, frequency modulation response from DC to 2 GHz. In the modulation frequency range of 10 MHz to 100 MHz it exhibited a |Δf/ΔI| of 0.5-1.8 GHz/mA, depending on the biasing level
  • Keywords
    III-V semiconductors; distributed feedback lasers; frequency modulation; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; vapour phase epitaxial growth; 0 to 2 GHz; 0.7 mW; 1.53 micron; GaInAsP-InP; VPE-transported DFB laser; blue-shifted frequency modulation response; frequency modulation characteristics; modulation frequency range; optical output power; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1535862