DocumentCode :
1535896
Title :
High-efficiency, zero-bias waveguide pin photodiode for low-power-consumption optical hybrid modules
Author :
Muramoto, Y. ; Kato, K. ; Kozen, A. ; Ueki, M. ; Noguchi, K. ; Akatsu, Y. ; Nakajima, O.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume :
33
Issue :
2
fYear :
1997
fDate :
1/16/1997 12:00:00 AM
Firstpage :
160
Lastpage :
161
Abstract :
The authors propose a novel waveguide photodiode structure that has an intentionally doped p-type region in the photoabsorption layer in order to make the operating voltage lower while keeping a high efficiency. The fabricated device has a high efficiency of 0.94 A/W and a 3dB bandwidth near 4 GHz at an operating voltage of 0 V. This waveguide photodiode is suitable for an optical hybrid module built with low-power ICs
Keywords :
optical waveguide components; p-i-n photodiodes; 0 V; 4 GHz; efficiency; low-power IC; optical hybrid module; p-type doping; photoabsorption layer; power consumption; waveguide pin photodiode;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970097
Filename :
579516
Link To Document :
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