Title :
High power saturation, polarisation insensitive electroabsorption modulator with spiked shallow wells
Author :
Devaux, F. ; Harmand, J.C. ; Dias, I.F.L. ; Guettler, T. ; Krebs, 0. ; Voisin, P.
Author_Institution :
CNET, Bagneux, France
fDate :
1/16/1997 12:00:00 AM
Abstract :
Adding a spike to quantum wells (QWs) provides an additional degree of freedom for QW engineering. The authors demonstrate this by designing a spiked shallow InGaAs/InGaAlAs well for efficient, polarisation independent electroabsorption modulation at 1.5 μm. An improvement in power saturation of more than several orders of magnitude is observed
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; semiconductor quantum wells; 1.55 micron; InGaAs-InGaAlAs; polarisation insensitive electroabsorption modulator; power saturation; spiked shallow quantum well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970109
