DocumentCode :
1535931
Title :
Temperature Characteristics of Gain Profiles in 1.3- 
-Doped and Undoped InAs/GaAs Quantum-Dot Lasers
Author :
Wang, Rui ; Tong, Cun Zhu ; Yoon, Soon Fatt ; Liu, Chong Yang ; Zhao, Han Xue ; Cao, Qi
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
30
Issue :
12
fYear :
2009
Firstpage :
1311
Lastpage :
1313
Abstract :
The modal gain and differential gain of 1.3-mum p-doped and undoped InAs/GaAs quantum-dot (QD) lasers have been investigated as a function of injection current under different operation temperatures. The results show that p-doping improves the modal and differential gains in QD lasers at high temperatures. Exponential decrease in the differential gain profiles were observed in both types of lasers from 20degC to 80degC. Theoretical calculations based on the rate equation model for the undoped QD laser gain at different temperatures are presented.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; quantum dot lasers; semiconductor doping; thermo-optical effects; InAs-GaAs; differential gain; injection current; laser gain profile; modal gain; p-doping; quantum dot laser; rate equation model; temperature 20 C to 80 C; temperature characteristics; wavelength 1.3 mum; $p$ -doping; Differential gain; modal gain; quantum dot (QD);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2033718
Filename :
5308380
Link To Document :
