DocumentCode
1535999
Title
Long-term 60 mW operation of 780 nm AlGaAs lasers with extended beam by additional low-Al-content layer in p-type cladding layer
Author
Nakatsuka, S. ; Yamashita, S. ; Uchida, K. ; Kajimura, T.
Author_Institution
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
Volume
27
Issue
11
fYear
1991
fDate
5/23/1991 12:00:00 AM
Firstpage
900
Lastpage
902
Abstract
The catastrophic optical damage level of a 780 nm AlGaAs laser diode is increased by extending the optical beam profile by using a low-Al-content layer in the cladding layer. A higher light output power can be obtained without increasing threshold current, and reliable operation for more than 1000 h at 60 mW output and 50 degrees C ambient is obtained.
Keywords
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; life testing; semiconductor device testing; semiconductor junction lasers; 1000 h; 50 degC; 60 mW; 780 nm; AlGaAs lasers; catastrophic optical damage level; laser diode; light output power; long term operation; low-Al-content layer; optical beam profile; p-type cladding layer; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910564
Filename
78081
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