DocumentCode
1536029
Title
Improved large-signal quasistatic MESFET model
Author
Kramer, Brad A. ; Weber, Robert J.
Author_Institution
Iowa State Univ., Ames, IA, USA
Volume
27
Issue
11
fYear
1991
fDate
5/23/1991 12:00:00 AM
Firstpage
906
Lastpage
908
Abstract
Improvements to the quasistatic modelling procedure which has been established by Rauscher and Willing (1978, 1979) are discussed. Specifically, a more accurate method of modelling the channel conductance and a technique for establishing the correct DC bias conditions within the MESFET model are provided.
Keywords
Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; DC bias conditions; MESFET; channel conductance; large-signal quasistatic model; microwave device; quasistatic modelling;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910568
Filename
78085
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