Title :
Improved large-signal quasistatic MESFET model
Author :
Kramer, Brad A. ; Weber, Robert J.
Author_Institution :
Iowa State Univ., Ames, IA, USA
fDate :
5/23/1991 12:00:00 AM
Abstract :
Improvements to the quasistatic modelling procedure which has been established by Rauscher and Willing (1978, 1979) are discussed. Specifically, a more accurate method of modelling the channel conductance and a technique for establishing the correct DC bias conditions within the MESFET model are provided.
Keywords :
Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; DC bias conditions; MESFET; channel conductance; large-signal quasistatic model; microwave device; quasistatic modelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910568
