• DocumentCode
    15361
  • Title

    High-frequency performance of AlGaN channel HEMTs with high breakdown voltage

  • Author

    Nanjo, T. ; Kurahashi, K. ; Imai, A. ; Suzuki, Yuya ; Nakmura, M. ; Suita, M. ; Yagyu, E.

  • Author_Institution
    Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki, Japan
  • Volume
    50
  • Issue
    22
  • fYear
    2014
  • fDate
    10 23 2014
  • Firstpage
    1577
  • Lastpage
    1579
  • Abstract
    The high-frequency characteristics of high electron mobility transistors applying AlGaN for a channel layer (AlGaN channel HEMTs) with greater impacts of alloy disorder scattering than those in conventional HEMTs with a GaN channel layer (GaN channel HEMTs) are investigated. The obtained electron saturation velocity was 4.7 × 106 cm/s and the cutoff frequency was 7 GHz in the AlGaN channel HEMTs with a gate length of 1 μm. These results are promising for several gigahertz band operations of AlGaN channel HEMTs.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave transistors; wide band gap semiconductors; AlGaN; AlGaN channel HEMT; GaN; GaN channel layer; alloy disorder scattering; breakdown voltage; electron saturation velocity; frequency 7 GHz; high electron mobility transistors; size 1 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.1874
  • Filename
    6937254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=15361