Title :
Switching voltage transient protection schemes for high-current IGBT modules
Author :
Chokhawala, Rahul S. ; Sobhani, Saed
Author_Institution :
ABB Semicond. AG, Lenzburg, Switzerland
Abstract :
The emergence of high-current and faster switching insulated gate bipolar transistor (IGBT) modules has made it imperative for designers to look at ways of protecting these devices against detrimental switching voltage transients that are a common side effect of these efficient transistors. This paper discusses protection criteria for both normal switching operation and short-circuit operation and covers in detail some of the protection schemes that were designed to address these problems
Keywords :
insulated gate bipolar transistors; power semiconductor switches; power system transients; protection; snubbers; switching; transients; RCD snubber; capacitive method; high-current IGBT modules; insulated gate bipolar transistor; normal switching operation; protection criteria; resistive method; resistor-capacitor diode; short-circuit operation; short-circuit safe operating area; switching safe operating area; switching voltage transient protection; voltage clamps; Capacitors; Circuit faults; Clamps; Fault currents; Inductance; Insulated gate bipolar transistors; Protection; Switches; Switching circuits; Voltage;
Journal_Title :
Industry Applications, IEEE Transactions on
