DocumentCode
1536605
Title
2.3 picoseconds optical gate monolithically integrating photodiode and electroabsorption modulator
Author
Kodama, S. ; Ito, T. ; Watanabe, N. ; Kondo, S. ; Takeuchi, H. ; Ito, H. ; Ishibashi, T.
Author_Institution
NTT Photonics Labs., Kanagawa, Japan
Volume
37
Issue
19
fYear
2001
fDate
9/13/2001 12:00:00 AM
Firstpage
1185
Lastpage
1186
Abstract
A novel ultra-high-speed optical gate monolithically integrating a uni-travelling-carrier photodiode and a travelling-wave electroabsorption modulator (TW-EAM) is presented. By using the nonlinear extinction characteristics of the EAM, the minimum gate opening time of 2.3 picoseconds with an extinction ratio of 14 dB is achieved
Keywords
electro-optical modulation; electroabsorption; high-speed optical techniques; integrated optoelectronics; optical communication equipment; photodiodes; 2.3 ps; GaAs-InAlAs; InP; InP-InGaAs; extinction ratio; minimum gate opening time; monolithic integration; nonlinear extinction characteristics; optical communication; travelling-wave electroabsorption modulator; ultra-high-speed optical gate; uni-travelling-carrier photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010780
Filename
953338
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