• DocumentCode
    1536659
  • Title

    Negative differential conductance due to resonant tunnelling through SiO2/single-crystalline-Si double barrier structure

  • Author

    Ishikawa, Y. ; Ishihara, T. ; Iwasaki, M. ; Tabe, M.

  • Author_Institution
    Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
  • Volume
    37
  • Issue
    19
  • fYear
    2001
  • fDate
    9/13/2001 12:00:00 AM
  • Firstpage
    1200
  • Lastpage
    1201
  • Abstract
    The resonant tunnelling effect was studied for Si/SiO2 double barrier structures fabricated from a bonded silicon-on-insulator wafer with an ultrathin buried SiO2 layer. As a result, in Si/SiO2 systems, we observed, for the first time, negative differential conductance due to resonant tunnelling of electrons
  • Keywords
    buried layers; elemental semiconductors; negative resistance; resonant tunnelling; silicon; silicon compounds; silicon-on-insulator; 15 K; Si-SiO2; Si/SiO2 double barrier structures; SiO2/single-crystalline-Si double barrier structure; bonded silicon-on-insulator wafer; negative differential conductance; resonant electron tunnelling; resonant tunnelling; ultrathin BOX layer; ultrathin buried SiO2 layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010817
  • Filename
    953347
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1536659