• DocumentCode
    1536854
  • Title

    Fast low-power decoders for RAMs

  • Author

    Amrutur, Bharadwaj S. ; Horowitz, Mark A.

  • Author_Institution
    Agilent Labs., Palo Alto, CA, USA
  • Volume
    36
  • Issue
    10
  • fYear
    2001
  • fDate
    10/1/2001 12:00:00 AM
  • Firstpage
    1506
  • Lastpage
    1515
  • Abstract
    Decoder design involves choosing the optimal circuit style and figuring out their sizing, including adding buffers if necessary. The problem of sizing a simple chain of logic gates has an elegant analytical solution, though there have been no corresponding analytical results until now which include the resistive effects of the interconnect. Using simple RC models, we analyze the problem of optimally sizing the decoder chain with RC interconnect and find the optimum fan-out to be about 4, just as in the case of a simple buffer chain. As in the simple buffer chain, supporting a fan-out of 4 often requires noninteger number of stages in the chain. Nevertheless, this result is used to arrive at a tight lower bound on the delay of a decoder. Two simple heuristics for sizing of real decoder with integer stages are examined. We evaluate a simple technique to reduce power, namely, reducing the sizes of the inputs of the word drivers, while sizing each of the subchains for maximum speed, and find that it provides for an efficient mechanism to trade off speed and power. We then use the RC models to compare different circuit techniques in use today and find that decoders with two input gates for all stages after the predecoder and pulse mode circuit techniques with skewed N to P ratios have the best performance
  • Keywords
    decoding; low-power electronics; random-access storage; RC model; buffer chain; circuit sizing; design optimization; fan-out; logic gate; low-power decoder; pulse mode circuit; random access memory; resistive interconnect; Decoding; Delay estimation; Driver circuits; Helium; Integrated circuit interconnections; Laboratories; Logic gates; Pulse circuits; Random access memory; Read-write memory;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.953479
  • Filename
    953479