Title :
A Pipelined ADC With Metastability Error Rate
10
Errors/Sample
Author :
Guhados, Shankar ; Hurst, Paul J. ; Lewis, Stephen H.
Author_Institution :
SanDisk Corp., Milpitas, CA, USA
Abstract :
A prototype 10-bit 80-MS/s pipelined analog-to-digital converter (ADC) implemented in a 0.25-μm CMOS process is described. The prototype uses a combination of time-interleaved and lookahead operations to allow one clock period for comparator regeneration, reducing the bit error rate (BER) due to comparator metastability by a factor between 104 and 106. Also, the front-end sample-and-hold amplifier (SHA) previously used to provide a 1/2 clock period of regeneration time for the first-stage comparators in a lookahead pipelined ADC is eliminated [1], [2], reducing the power consumption and the input-referred noise. The analog power dissipation is 72 mW from a 2.5-V supply. At a sampling rate of 80 MS/s, the prototype achieves a peak signal-to-noise-and-distortion ratio of 58.3 dB for an input frequency of 80 kHz. Also, for a comparator bias current of 100 μA, extrapolations from measurements show that the BER is <;10-15 errors/sample.
Keywords :
CMOS integrated circuits; amplifiers; analogue-digital conversion; comparators (circuits); error statistics; extrapolation; sample and hold circuits; BER; CMOS process; SHA; bit error rate; comparator regeneration; current 100 muA; extrapolations; first-stage comparators; frequency 80 kHz; front-end sample-and-hold amplifier; input-referred noise; lookahead operations; metastability error rate; peak signal-to-noise-and-distortion ratio; pipelined ADC; pipelined analog-to-digital converter; power 72 mW; power consumption reduction; size 0.25 mum; time-interleaved operations; voltage 2.5 V; word length 10 bit; Bit error rate; Clocks; Inverters; Latches; Logic gates; Noise; Prototypes; Analog-to-digital converter (ADC); CMOS analog integrated circuits; bit error rate (BER); comparator; lookahead; metastability; pipelined ADC; time interleaving; triple-modular redundancy (TMR);
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2012.2198773