Title :
Design impact of positive temperature dependence on drain current in sub-1-V CMOS VLSIs
Author :
Kanda, Kouichi ; Nose, Kouichi ; Kawaguchi, Hiroshi ; Sakurai, Takayasu
Author_Institution :
Center for Collaborative Res., Tokyo Univ., Japan
fDate :
10/1/2001 12:00:00 AM
Abstract :
In sub-1-V CMOS designs, especially around 0.5-V CMOS designs, on-state drain current of MOSFETs shows positive temperature dependence, being different from the negative temperature dependence in the conventional voltage designs. Combined with low threshold voltage less than 0.2 V, the possibility of temperature instability increases. This paper describes possible temperature instabilities in the low-voltage regime by using circuit simulation environments incorporating temperature change in time and experiments using MOSFETs and the 32-bit adder circuit in quarter-micrometer CMOS technology with a low threshold voltage of 0.25 V
Keywords :
CMOS logic circuits; VLSI; adders; integrated circuit design; low-power electronics; 0.25 V; 32 bit; CMOS VLSI; adder; circuit simulation; drain current; low-voltage design; temperature dependence; temperature instability; threshold voltage; CMOS technology; Circuit simulation; Degradation; Delay; MOS devices; MOSFETs; Temperature dependence; Temperature measurement; Threshold voltage; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
