• DocumentCode
    1536893
  • Title

    Comment on “Compact, High-Q, and Low-Current Dissipation CMOS Differential Active Inductor”

  • Author

    Andriesei, C. ; Goras, Liviu ; Maftei, Vlad

  • Author_Institution
    Faculty of Electronics, Telecommunications and Information Technology, “Gheorghe Asachi” Technical University of Iaşi, Romania
  • Volume
    22
  • Issue
    7
  • fYear
    2012
  • fDate
    7/1/2012 12:00:00 AM
  • Firstpage
    381
  • Lastpage
    382
  • Abstract
    In a recent letter [ibid., vol. 18, no. 10, pp. 683??685, Oct. 2008], C.L. Ler et al. present a CMOS differential active inductor (DAI) based on the single transistor source degenerated architecture proposed by those authors in ibid., vol. 44, no. 3, pp. 196??197, Jan. 2008. The aim of this Comment is to reveal the general configurations and circuit equivalences which the results in the Oct 2008 paper are based on and to prove that the active inductor does not fit to the term gyrator mentioned in that paper. In this regard, two observations are proposed. The first one is that both circuits can be derived from given general topologies using capacitors for Z(s). The second observation is that the series connection shown here in Fig. 2(a) is equivalent to the series-parallel circuit in Fig. 2(b) which for Z(s) = 1/sC gives the results reported in the two papers referenced.
  • Keywords
    Active inductors; CMOS integrated circuits; Capacitors; Gyrators; Transistors;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2012.2202891
  • Filename
    6214996