Modulation bandwidth optimisation for unipolar intersubband semiconductor lasers

Author

Cheun, C. Y L ; Spencer, P.S. ; Shore, K.A.

Author_Institution

School of Electron. Eng. & Comput. Syst., Univ. of Wales, Bangor, UK

Volume

144

Issue

1

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

44

Lastpage

47

Abstract

A rate equation analysis of the direct current modulation response of intersubband semiconductor lasers is reported using a rate equation model for a triple quantum well structure. It is demonstrated that terahertz modulation bandwidths may be achievable due to the picosecond carrier lifetimes which are characteristic of such structures. A novel feature of the modulation response of intersubband semiconductor lasers is the existence of an optimum output power for achieving maximum modulation bandwidth in a given structure. Further optimisation of the modulation performance is achievable via appropriate design of the coupled quantum well structure

Keywords

carrier lifetime; high-speed optical techniques; laser theory; optical design techniques; optimisation; quantum well lasers; semiconductor device models; coupled quantum well structure design; direct current modulation response; modulation bandwidth optimisation; optimum output power; picosecond carrier lifetimes; rate equation analysis; rate equation model; terahertz modulation bandwidths; triple quantum well structure; unipolar intersubband semiconductor lasers;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19971068

Filename

580333