DocumentCode :
1537012
Title :
On effective I/sub DDQ/ testing of low-voltage CMOS circuits using leakage control techniques
Author :
Chen, Zhanping ; Wei, Liqiong ; Roy, Kaushik
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Volume :
9
Issue :
5
fYear :
2001
Firstpage :
718
Lastpage :
725
Abstract :
The use of low-threshold devices in low-voltage CMOS circuits leads to an exponential increase in the intrinsic leakage current. This threatens the effectiveness of I/sub DDQ/ testing for such low-voltage circuits because it is difficult to differentiate a defect-free circuit from defective circuits. Recently, several leakage control techniques have been proposed to reduce intrinsic leakage current, which may benefit I/sub DDQ/ testing. In this paper, we investigate the possibilities of applying different leakage control techniques to improve the fault coverage of I/sub DDQ/ testing. Results on a large number of benchmarks indicate that dual-threshold and vector control techniques can be very effective in improving fault coverage for I/sub DDQ/ testing for some circuits.
Keywords :
CMOS integrated circuits; VLSI; fault diagnosis; integrated circuit reliability; integrated circuit testing; leakage currents; low-power electronics; I/sub DDQ/ testing; benchmarks; dual-threshold techniques; fault coverage; intrinsic leakage current; leakage control techniques; low-threshold devices; low-voltage CMOS circuits; vector control techniques; Benchmark testing; Circuit faults; Circuit testing; Dynamic voltage scaling; Energy consumption; Leakage current; Low voltage; Power system reliability; Temperature dependence; Threshold voltage;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/92.953504
Filename :
953504
Link To Document :
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