DocumentCode
1537043
Title
High dynamic range microwave FET
Author
Ikalainen, P.K. ; Witkowski, L.C.
Author_Institution
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
Volume
27
Issue
11
fYear
1991
fDate
5/23/1991 12:00:00 AM
Firstpage
945
Lastpage
946
Abstract
A highly linear GaAs MESFET has demonstrated an output two-tone third-order intercept point of 42.2 dBm at 10 GHz with 3.15 dB noise figure and 9.1 dB gain with only 240 mW of DC bias. Minimum noise figure was 1.24 dB.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; solid-state microwave devices; 1.24 to 3.15 dB; 10 GHz; 9.1 dB; DC bias; GaAs; III-V semiconductors; MESFET; noise figure; output two-tone third-order intercept point;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910590
Filename
78106
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