Title :
Short channel effect in thin-film accumulation-mode p-channel SOI MOSFETs
Author :
Smeys, Peter ; Clerix, A. ; Colinge, J.-P.
Author_Institution :
IMEC vzw, Leuven, Belgium
fDate :
5/23/1991 12:00:00 AM
Abstract :
A short channel effect in thin-film accumulation-mode p-channel SOI MOSFETs is investigated. It is observed that a significant leakage current can flow in a short-channel p+pp+-device when it is turned off. Two dimensional numerical simulations reveal that the nature of this current in short-channel SOI MOSFETs is due to the combination of potential barrier lowering effects caused by the presence of a negative back-gate bias and that of a large drain voltage.
Keywords :
insulated gate field effect transistors; leakage currents; semiconductor device models; thin film transistors; 2D numerical simulation; SOI MOSFETs; Si; accumulation-mode; drain voltage; leakage current; negative back-gate bias; p-channel; p +pp +-device; potential barrier lowering effects; short channel effect; thin film device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910605
