Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

Author

Eliseev, P.G. ; Li, Huaqing ; Liu, Tiegen ; Newell, T.C. ; Lester, L.F. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM

Volume

7

Issue

2

fYear

2001

Firstpage

135

Lastpage

142

Abstract

Emission spectra and modal optical gain are investigated in ultralow-threshold MBE-grown InAs-InGaAs quantum dot (QD) structures. The record lowest room-temperature inversion current is found to be ~13 A cm^-2. The rate-equation model is proposed describing the optical gain related to the ground-state (GS) transitions in QDs. The ground-state gain goes to the maximum value that corresponds to the total inversion of available levels. The gain cross section for the GS emission is estimated as ~7×10^-15 cm²

Keywords

III-V semiconductors; gallium arsenide; ground states; indium compounds; laser transitions; quantum well lasers; semiconductor quantum dots; spontaneous emission; DWELL lasers; InAs-InGaAs; MBE growth; emission spectra; gain cross section; ground-state emission; ground-state transitions; modal optical gain; rate-equation model; room-temperature inversion current; total level inversion; ultralow-threshold InAs-InGaAs quantum-dot lasers; Diode lasers; Indium gallium arsenide; Optical materials; Optical recording; Quantum dot lasers; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Stimulated emission; Threshold current;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.954121

Filename

954121