Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-μm range

Author

Fischer, Marc O. ; Reinhardt, M. ; Forchel, A.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

Volume

7

Issue

2

fYear

2001

Firstpage

149

Lastpage

151

Abstract

GaInAsN-GaAs double quantum-well (DQW) laser structures emitting in the 1.5-μm range were grown by solid source molecular beam epitaxy using a radio frequency plasma source for nitrogen activation. Lasing operation in the 1.5-μm wavelength region has been realized for fabricated ridge waveguide laser diodes (LDs) under pulsed condition up to record high temperatures of 80°C resulting in an emission wavelength of 1540 nm. This is the highest emission wavelength for laser diode operation based on GaAs. In addition, to investigate the optical properties of the active region, photoluminescence studies of underlying GaInAsN-GaAs QW structures emitting at wavelengths up to 1.55 μm are presented

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor quantum wells; waveguide lasers; 1.5 mum; 1.5-μm range; 1.55 mum; 1540 nm; 80 C; GaInAsN-GaAs; GaInAsN-GaAs QW structures; GaInAsN-GaAs double quantum-well laser structures; emission wavelength; nitrogen activation; optical properties; photoluminescence studies; pulsed condition; radio frequency plasma source; ridge waveguide laser diodes; room-temperature operation; solid source molecular beam epitaxy; Diode lasers; Molecular beam epitaxial growth; Nitrogen; Optical pulses; Optical waveguides; Plasma sources; Quantum well lasers; Radio frequency; Solid lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.954123

Filename

954123