DocumentCode :
1537154
Title :
High-power 1.55-μm mass-transport-grating DFB lasers for externally modulated systems
Author :
Inaba, Yuichi ; Nakayama, Hisashi ; Kito, Masahiro ; Ishino, Masato ; Itoh, Kunio
Author_Institution :
Semicond. Device Res. Center, Matsushita Electron. Corp., Osaka, Japan
Volume :
7
Issue :
2
fYear :
2001
Firstpage :
152
Lastpage :
158
Abstract :
High-output-power operation of 1.55-μm-wavelength distributed-feedback (DFB) lasers with a novel mass-transport grating (MTG) structure which is composed of InAsP buried with InP are reported. To improve high output power characteristics, we have investigated the influence of the width of the active layer on the light output power and the spectral linewidth at high injection current. It is confirmed that the increase of the active layer width is effective to realize high output power and to reduce the linewidth power product. The fabricated lasers show high single-longitudinal-mode output power of 180 mW, which is the highest value reported for 1.55-μm DFB lasers. They also exhibit narrow spectral linewidths less than 0.3 MHz and low noise characteristics of -159 dB/Hz. Moreover, we have obtained the mean time to failure of longer than 105 h with a lifetime test over 200 h at 50°C
Keywords :
III-V semiconductors; buried layers; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; optical modulation; quantum well lasers; waveguide lasers; 1.55 mum; 180 mW; 1E5 hour; 50 C; InAsP buried grating layer; InGaAsP-InAsP; active layer width; buried InAsP; externally modulated systems; high injection current; high output power characteristics; high-power 1.55-μm mass-transport-grating DFB lasers; lifetime test; light output power; linewidth power product; low noise characteristics; mass-transport grating structure; mean time to failure; single-longitudinal-mode output power; spectral linewidth; Distributed feedback devices; Gratings; Laser feedback; Laser noise; Optical fiber communication; Optical noise; Power generation; Power lasers; Semiconductor device noise; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.954124
Filename :
954124
Link To Document :
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