Title :
Demonstration of retiming capability of silicon bipolar time-division multiplexer operating to 24 Gbit/s
Author :
Hauenschild, J. ; Rein, H.M. ; McFarland, W. ; Doernberg, J. ; Pettengill, D.
Author_Institution :
Ruhr-Univ., Bochum, Germany
fDate :
5/23/1991 12:00:00 AM
Abstract :
The retiming capability of a high-speed silicon bipolar time-division multiplexer IC is demonstrated. At an output data rate of 20 Gbit/s, a clock phase margin of 150 degrees was measured. The maximum data rate of 24 Gbit/s is the best experimental value reported for silicon multiplexers.
Keywords :
bipolar integrated circuits; digital integrated circuits; elemental semiconductors; multiplexing equipment; silicon; 24 Gbit/s; Si; TDM IC; bipolar IC; high-speed; retiming capability; time-division multiplexer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910610
